An effective density of fixed interface charges was determined by applying high-frequency capacitance-voltage measurements to metal-SIPOS-silicon and metal-silicon-nitride-silicon capacitors. Access provided by: anon Sign Out. Chang Hyun Lee. Sign up for new issue notifications. Archive Journals. The article was received on 12 Mayaccepted on 22 Jul and first published on 26 Jul Donghwan Kim.
Semi-insulating polycrystalline-silicon (SIPOS) films have been used as a replacement of a silicon dioxide passivation layer of planar devices. The SIPOS films.
Semantic Scholar extracted view of "Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology" by Takeshi Matsushita et al.
PDF | A semi-insulating polycrystalline-silicon (SIPOS) film doped with Furthermore, the silicon surface passivated by SIPOS films shows high.
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Video: Semi-insulating polycrystalline silicon passivation E992 Passivation Process_narration
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SemiInsulating PolycrystallineSilicon (SIPOS) Passivation Technology Semantic Scholar
Education in Chemistry. The npn and pnp transistors rated at V and V have been produced by the SIPOS process in planar-like structures with field-limiting rings.
Semi-insulating polycrystalline silicon passivation
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Interface effects of SIPOS passivation IEEE Journals & Magazine
Semi-insulating polycrystalline silicon (polysilicon) films were used as replacements for the SiO 2 passivation layers of mesa and planar high voltage.
Low-Pressure Chemical Vapor Deposition of Semi-Insulating Polycrystalline Silicon (SIPOS) and its Analysis: Application to Power Diode Passivation. 9.
Video: Semi-insulating polycrystalline silicon passivation UNSW SPREE 201410-02 Bart Vermang - Passivation of Si and CIGS Surfaces
Jump to site search. Experimental and theoretical values of the breakdown voltage in relation to the density of fixed interface charges agree very well for both SIPOS and silicon-nitride-passivated samples. Chemistry World. The SIPOS films are chemically vapordeposited polycrystalline-silicon doped with oxygen or nitrogen atoms.
These findings reveal the physical meaning of an effective density of interface charges determined in SIPOS-silicon samples by capacitance-voltage measurements.
SemiInsulating PolycrystallineSilicon (SIPOS) Passivation Technology IOPscience
Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.
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